Nov 25, 2025

US12481201 - Flexible infrared selective emitter and manufacturing method thereof

Image unavailable

The present invention provides an infrared selective emitter in which since infrared energy can be emitted in a desired wavelength band by adjusting a metamaterial having a repeating structure on a plane, infrared camouflage is possible by attaching to the surface of the shape of an object to be camouflaged, and at the same time, the infrared selective emitter has flexible characteristics that can be applied to curved surfaces without limitations on the shape of an object.

Assignee: UIF (University Industry Foundation), Yonsei University
Inventors: Hyung Hee Cho, Namkyu Lee, Joon-Soo Lim, Injoong Chang, Juyeong Nam, Hyung Mo Bae, Maroosol Yun
Filing date: 2022-12-22

infraredemittercamouflagedryicefogdefensesprayselfdefense

The invention describes a flexible infrared selective emitter that can emit infrared energy at specific wavelengths, enabling effective camouflage by conforming to various object shapes. It consists of a substrate, a conductive thin film layer, and a meta-surface with structured insulating and metal layers, designed for flexibility and specific emissivity characteristics.

Claim 1

1 . A flexible infrared selective emitter, comprising: (a) a substrate; (b) a conductive thin film layer which is disposed on the substrate; and (c) a meta-surface portion in which a plurality of structures in which an insulating layer and a metal layer are laminated are arranged to form a predetermined pattern on the conductive thin film layer; wherein the insulating layer is any one selected from silicon nitride (Si 3 N 4 ) and silicon oxide (SiO 2 ); wherein the metal layer is formed of gold (Au); wherein, when the insulating layer is silicon nitride, the thickness of the insulating layer is 50 to 100 nm; wherein, when the insulating layer is silicon oxide, the thickness of the insulating layer is 100 to 200 nm; wherein the thickness of the metal layer is 100 to 300 nm; wherein the size of the structure is 1 to 3 μm; wherein the emissivity is 0.2 or less in infrared wavelength bands of 3 to 5 μm and 8 to 12 μm; and wherein the flexible infrared selective emitter has a radius of curvature of 250 μm or more. (a) a substrate; (b) a conductive thin film layer which is disposed on the substrate; and (c) a meta-surface portion in which a plurality of structures in which an insulating layer and a metal layer are laminated are arranged to form a predetermined pattern on the conductive thin film layer; wherein the insulating layer is any one selected from silicon nitride (Si 3 N 4 ) and silicon oxide (SiO 2 ); wherein the metal layer is formed of gold (Au); wherein, when the insulating layer is silicon nitride, the thickness of the insulating layer is 50 to 100 nm; wherein, when the insulating layer is silicon oxide, the thickness of the insulating layer is 100 to 200 nm; wherein the thickness of the metal layer is 100 to 300 nm; wherein the size of the structure is 1 to 3 μm; wherein the emissivity is 0.2 or less in infrared wavelength bands of 3 to 5 μm and 8 to 12 μm; and wherein the flexible infrared selective emitter has a radius of curvature of 250 μm or more.

Google Patents

https://patents.google.com/patent/US12481201

USPTO PDF

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/12481201