Sep 2, 2025

US12405091 - Light-transmissive multispectral stealth device

A light-transmissive multispectral stealth device is disclosed. The light-transmissive multispectral stealth device includes a selective wavelength absorption pattern layer including conductive thin-film patterns, wherein each of the conductive thin-film patterns is made of a material capable of transmitting visible light therethrough and having electrical conductivity, wherein the conductive thin-film patterns are capable of inducing an electromagnetic resonance at a first wavelength and a second wavelength different from the first wavelength; a dielectric layer disposed under the selective wavelength absorption pattern layer and made of a dielectric material capable of transmitting the visible light therethrough, wherein the dielectric layer together with the selective wavelength absorption pattern layer induce the electromagnetic resonance; and a reflective layer disposed under the dielectric layer, wherein the reflective layer is made of a material capable of transmitting the visible light therethrough and reflecting at least a portion of an infrared ray therefrom.

Assignee: INDUSTRY-ACADEMIC COOPERATING FOUNDATION YONSEI UNIVERSITY
Inventors: Jae Won Hahn, Ki Wook Han, Hyeon Bo Shim
Filing date: 2022-12-22

The patent describes a light-transmissive multispectral stealth device designed to manipulate electromagnetic resonance through a layered structure, including conductive thin-film patterns and dielectric materials. This device aims to enhance stealth capabilities by allowing visible light transmission while reflecting infrared rays, making it potentially useful in military applications.

Claim 1

A light-transmissive multispectral stealth device comprising: a selective wavelength absorption pattern layer including conductive thin-film patterns, wherein each of the conductive thin-film patterns is made of a material capable of transmitting visible light therethrough and having electrical conductivity, wherein the conductive thin-film patterns are capable of inducing an electromagnetic resonance at a first wavelength and a second wavelength different from the first wavelength; a dielectric layer disposed under the selective wavelength absorption pattern layer and made of a dielectric material capable of transmitting the visible light therethrough, wherein the dielectric layer together with the selective wavelength absorption pattern layer induce the electromagnetic resonance; and a reflective layer disposed under the dielectric layer, wherein the reflective layer is made of a material capable of transmitting the visible light therethrough and reflecting at least a portion of an infrared ray therefrom, wherein: the selective wavelength absorption pattern layer is composed of a plurality of unit areas arranged horizontally, each of the plurality of unit areas has a square shape having two sides parallel to a first direction and two sides parallel to a second direction perpendicular to the first direction, wherein the conductive thin-film patterns are disposed in each of the plurality of unit areas, and the conductive thin-film patterns disposed in each of the plurality of unit areas include: one first thin-film pattern having a planar shape of a first square having two sides parallel to the first direction and two sides parallel to the second direction, wherein a length of one side of the first square is a first length, wherein the first thin-film pattern is disposed in an area adjacent to a first corner of the unit area; N 2 second thin-film patterns arranged in an N×N matrix form and disposed in an area adjacent to a third corner of the unit area facing the first corner in a first diagonal direction of the unit area, wherein each of the second thin-film patterns has a planar shape of a second square having two sides parallel to the first direction and two sides parallel to the second direction, wherein a length of one side of the second square is a second length smaller than the first length; and 2N third thin-film patterns, wherein each of the 2N third thin-film patterns has a rectangular planar shape having two long sides and two short sides, wherein a length of each of the long sides is equal to the first length, and a length of each of the short sides is equal to the second length, wherein N third thin-film patterns of the 2N third thin-film patterns are arranged in an line in the first direction and are disposed in an area adjacent to a second corner of the unit area adjacent to the first corner, wherein remaining N third thin-film patterns of the 2N third thin-film patterns are arranged in an line in the second direction and are disposed in an area adjacent to a fourth corner of the unit area facing the second corner in a second diagonal direction of the unit area, wherein N is an integer in a range of 2 to 5. a selective wavelength absorption pattern layer including conductive thin-film patterns, wherein each of the conductive thin-film patterns is made of a material capable of transmitting visible light therethrough and having electrical conductivity, wherein the conductive thin-film patterns are capable of inducing an electromagnetic resonance at a first wavelength and a second wavelength different from the first wavelength; a dielectric layer disposed under the selective wavelength absorption pattern layer and made of a dielectric material capable of transmitting the visible light therethrough, wherein the dielectric layer together with the selective wavelength absorption pattern layer induce the electromagnetic resonance; and a reflective layer disposed under the dielectric layer, wherein the reflective layer is made of a material capable of transmitting the visible light therethrough and reflecting at least a portion of an infrared ray therefrom, wherein: the selective wavelength absorption pattern layer is composed of a plurality of unit areas arranged horizontally, each of the plurality of unit areas has a square shape having two sides parallel to a first direction and two sides parallel to a second direction perpendicular to the first direction, wherein the conductive thin-film patterns are disposed in each of the plurality of unit areas, and the conductive thin-film patterns disposed in each of the plurality of unit areas include: one first thin-film pattern having a planar shape of a first square having two sides parallel to the first direction and two sides parallel to the second direction, wherein a length of one side of the first square is a first length, wherein the first thin-film pattern is disposed in an area adjacent to a first corner of the unit area; N 2 second thin-film patterns arranged in an N×N matrix form and disposed in an area adjacent to a third corner of the unit area facing the first corner in a first diagonal direction of the unit area, wherein each of the second thin-film patterns has a planar shape of a second square having two sides parallel to the first direction and two sides parallel to the second direction, wherein a length of one side of the second square is a second length smaller than the first length; and 2N third thin-film patterns, wherein each of the 2N third thin-film patterns has a rectangular planar shape having two long sides and two short sides, wherein a length of each of the long sides is equal to the first length, and a length of each of the short sides is equal to the second length, wherein N third thin-film patterns of the 2N third thin-film patterns are arranged in an line in the first direction and are disposed in an area adjacent to a second corner of the unit area adjacent to the first corner, wherein remaining N third thin-film patterns of the 2N third thin-film patterns are arranged in an line in the second direction and are disposed in an area adjacent to a fourth corner of the unit area facing the second corner in a second diagonal direction of the unit area, wherein N is an integer in a range of 2 to 5.

Google Patents

https://patents.google.com/patent/US12405091

USPTO PDF

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/12405091